IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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These dimensions are measured at the outermost extremes of the plastic body.
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Thermal pad contour optional with dimensions D1 and E1. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products dataheet for such applications.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications. B, Mar This datasheet is subject to change without notice. Drain Current Current regulator Same type as D. Product names and markings noted herein may be trademarks of their respective owners.
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IRFP MOSFET N-CH V A TOAC Vishay IR datasheet pdf data sheet FREE from
Repetitive rating; pulse width limited by dataheet junction temperature see fig. Dimension D and E do not include mold flash. Case Temperature tr td off tf Fig. Mold flash shall not exceed 0.
IRF datasheet (electronic components) search result | eet
Lead finish uncontrolled in L1. Xian and Mingxin actually photo. Contour of slot optional.